The Adsorption and Decomposition of Gallane Adducts on GaAs (100)
- 1 January 1992
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Tri-isopropyl gallium: A very promising precursor for chemical beam epitaxyApplied Physics Letters, 1992
- Comparison of triethylgallium and tri-isobutylgallium for growth of GaAs and AlGaAs by metalorganic molecular beam epitaxyApplied Physics Letters, 1992
- Applications of MBMS and surface spectroscopic techniques in the study of reaction mechanisms in CBE; investigations of the reactivity of tritertiarybutylgallium and triisobutylgallium as alternative precursors for epilayer growthJournal of Crystal Growth, 1992
- Advances in MOVPE, MBE, and CBEJournal of Crystal Growth, 1992
- Growth and MBMS studies of reaction mechanisms for InxGa1−xAs CBEJournal of Crystal Growth, 1992
- The search for all-hydride MOMBE: examination of trimethylamine alane, trimethylamine gallane, and arsineJournal of Crystal Growth, 1991
- Surface chemical processes in metal organic molecular-beam epitaxy; Ga deposition from triethylgallium on GaAs(100)Journal of Applied Physics, 1990
- Carbon incorporation in AlGaAs grown by CBEJournal of Crystal Growth, 1990
- Surface decomposition mechanism of the novel precursor bistrimethylamine aluminium hydride on GaAs (100)Vacuum, 1990
- Laser-Assisted MOMBE Growth of GaAs Using Tri-Isobutyl GalliumJapanese Journal of Applied Physics, 1989