Surface nucleation of Ti silicides at elevated temperatures

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Abstract
The nucleation of Ti silicide at the surfaces of Si was studied. Deposition of Ti and codeposition of TiSix at elevated temperatures on single crystal and amorphous Si led to the direct growth of silicides. The temperature and composition of the deposition and the crystallinity of the substrate were found to have a strong effect on the phases(s) of the silicide layer. A remarkably low nucleation temperature, ∼500 °C, for the low-resistivity C54-TiSi2 phase was observed on amorphous Si. Stoichiometric and uniform TiSi2 layers were grown with the depositions of pure Ti. On crystalline Si, uniform TiSi2 layers were also grown at ∼500 °C with the deposition of essentially Ti. The significant difference between silicide formation in the present scheme and that under conventional silicide processing was discussed in terms of a possible circumvention of precursor amorphous salicide phases during surface nucleation.

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