A Monte Carlo simulation of electron beam lithography used to create 0.5-μm structures on GaAs

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Abstract
We have used a positive trilevel resist structure on GaAs to verify our general purpose calculations of electron beam lithography. The model uses a single-scattering Monte Carlo simulation of electron–solid interactions, a simple dissolution rate versus energy model for the resist, and a string model for resist development. The spot size of the electron beam was varied from 0.2 to 0.4 μm in diameter. Experimental results on scanning electron microscopy linewidths and wall profiles are in good agreement with the simulation. Using the model, we have determined the change in process latitude with increasing spot size. However, we find that the lithography process is still able to create 0.5-μm lines even with large (0.4-μm) spots.

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