Growth of GaN on Si substrates using BP thin layer as a buffer
- 1 June 2000
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 75 (2-3) , 207-209
- https://doi.org/10.1016/s0921-5107(00)00364-0
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPEJournal of Crystal Growth, 1989
- A minimal basis semi-ab initio approach to the band structures of semiconductorsJournal of Physics and Chemistry of Solids, 1985