Growth temperature dependence of low-noise MESFET in molecular-beam epitaxy

2 January 1987

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 23 (1) , 7-8
https://doi.org/10.1049/el:19870005

Abstract

The substrate growth temperature dependence of electrical properties for a low-noise MESFET fabricated on MBE-grown material has been demonstrated. The optimum noise figure and its associated gain were attributed to the higher epilayer quality and mobility at a growth temperature of 650°C between temperatures of 550°C and 700°C.

Keywords

OPTIMUM NOISE FIGURE
GAIN
MOLECULAR-BEAM EPITAXY
LOW-NOISE MESFET
SOLID STATE MICROWAVE DEVICES
MOBILITY
550 TO 700 DEGC
EPILAYER QUALITY
8 GHZ
III-V SEMICONDUCTORS
ELECTRICAL PROPERTIES
SUBSTRATE GROWTH TEMPERATURE DEPENDENCE
MBE-GROWTH MATERIAL
GAAS

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