Novel buried heterostructure laser triode for monolithic integration

3 August 1989

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 25 (16) , 1096-1097
https://doi.org/10.1049/el:19890733

Abstract

A novel semiconductor laser, the ‘T-squared injection buried heterostructure laser triode’ (TI-BHLT), has been successfully fabricated by MOVPE with in situ HCI vapour phase mesaetching. The laser has been operated with a threshold current of 25 mA by independently injecting electrons into an active region from two n-type embedded regions.

Keywords

INDEPENDENTLY INJECTING ELECTRONS
TI-BHLT
BURIED HETEROSTRUCTURE LASER TRIODE
N-TYPE EMBEDDED REGIONS
SEMICONDUCTOR LASER
ACTIVE REGION
THRESHOLD CURRENT
MONOLITHIC INTEGRATION
T-SQUARED INJECTION BURIED HETEROSTRUCTURE LASER TRIODE
HCL VAPOUR PHASE MESA-ETCHING
MOVPE

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