A comment on thermal defect creation in hydrogenated amorphous silicon
- 1 September 1992
- journal article
- Published by Taylor & Francis in Philosophical Magazine Letters
- Vol. 66 (3) , 147-150
- https://doi.org/10.1080/09500839208229277
Abstract
The theoretical modelling of the temperature-dependent metastable dangling-bond density in undoped hydrogenated amorphous silicon (a-Si: H) is critically reviewed. It is shown that thermal broadening of the band tails provides the main contribution to the observed increase in the deep-defect density in a-Si: H with increasing temperature. The possible structural origins of this phenomenon are briefly discussed.Keywords
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