Abrupt metal-semiconductor interfaces
- 1 January 1991
- journal article
- Published by IOP Publishing in Physica Scripta
- Vol. T35, 261-267
- https://doi.org/10.1088/0031-8949/1991/t35/052
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Structure of (√3×√3)R30° Ag on Si(111)Physical Review B, 1990
- Synchrotron radiation investigation and surface spectroscopy studies of prototypical systems: Lead-semiconductor interfacesApplied Surface Science, 1990
- Fermi-level pinning and surface-state band structure of the Si(111)-(√3×√3)R30°-Ag surfacePhysical Review Letters, 1989
- THE RELATIONSHIP BETWEEN THE METASTABLE AND STABLE PHASES OF Pb/Si (111)Le Journal de Physique Colloques, 1989
- Structural and electronic properties of Ag/Si(111) and Au/Si(111) surfacesJournal of Vacuum Science & Technology A, 1989
- Reflection high-energy electron diffraction intensity oscillations during the growth of Pb on Si(111)Journal of Applied Physics, 1988
- Local electronic structure and surface geometry of Ag on Si(111)Journal of Vacuum Science & Technology B, 1988
- Surface and bulk core-level shifts of the Si(111)√3 √3-Ag surface: Evidence for a charged√3 √3layerPhysical Review Letters, 1987
- On the structure of monolayer liquid Pb on Ge(1 1 1) surfacesSolid State Communications, 1984
- Formation of two-dimensional solid and liquid Pb on Ge(1 1 1) surfacesSolid State Communications, 1983