Large Gate Leakage Current in AlGaN/GaN High Electron Mobility Transistors
- 15 August 2002
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 41 (Part 1, No) , 5125-5126
- https://doi.org/10.1143/jjap.41.5125
Abstract
A large gate leakage current in AlGaN/GaN high electron mobility transistors (HEMTs) was observed. Temperature dependence of Ig-Vg characteristics revealed that tunneling current is dominant in the leakage current. By introducing ECR plasma treatment before the gate metal deposition, the gate leakage current was reduced by two to three orders of magnitude.Keywords
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