A novel 0.25 μm via plug process using low temperature CVD Al/TiN

19 November 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 1001-1004
https://doi.org/10.1109/iedm.1995.499385

Abstract

A novel aluminum plug process is described which offers over a 3/spl times/ reduction in via resistance as compared with current tungsten plug technology. The performance advantage of the new process is further enhanced by its compatibility with low thermal budget, low-k dielectric materials, allowing significant reduction in the overall interconnect RC time constant. Key features of the Al plug technology include an over-hang free MOCVD (metal organic CVD) TiN liner, a single step low temperature (260/spl deg/C) chemical vapor deposition (LTCVD) of aluminum (resistivity 3/spl times/ lower via resistance compared with W plugs (1.5 vs. 5.0 ohms) with no degradation in electromigration reliability.

Keywords

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