Analysis of an enhanced photoresponse observed at subgrain boundaries in polysilicon solar cells

1 October 1983

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 30 (10) , 1271-1273
https://doi.org/10.1109/T-ED.1983.21285

Abstract

In an earlier study, an enhanced photoresponse was observed at dislocation subgrain boundaries in a polysilicon solar cell. The sub-grain boundaries were revealed by X-ray topography methods. The enhanced photoresponse was attributed to preferential diffusion along the subgrain boundaries relative to a distance significant with respect to the value of the minority-carrier diffusion length. Using a theoretical model of the carrier collection at the preferentially diffused boundaries, the wavelength dependence of the enhanced carrier collection is calculated. These results generally confirm the earlier experimentally derived model.

Keywords

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