Low-temperature (350 °C) growth of AlGaAs/GaAs laser diode by migration enhanced epitaxy
- 1 July 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (1) , 432-434
- https://doi.org/10.1063/1.341211
Abstract
Migration enhanced epitaxy, in which group III and group V elements are deposited onto the substrate alternately under ultrahigh vacuum, has been employed to reduce AlGaAs growth temperature. By optimizing growth conditions of AlGaAs, molecular-beam intensities, and substrate temperatures between 600 and 250 °C, an AlGaAs/GaAs single-quantum-well laser diode has been fabricated successfully at very low temperature of 350 °C for the first time. A broad area laser diode emitting at 780 nm shows the threshold current density of 2.5 kA/cm2 at room temperature under the pulsed operation.This publication has 4 references indexed in Scilit:
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