Characterization of carbon nitride films prepared by laser reactive ablation deposition
- 29 December 1995
- journal article
- Published by Elsevier in Journal of Electron Spectroscopy and Related Phenomena
- Vol. 76, 747-752
- https://doi.org/10.1016/0368-2048(95)02398-4
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- Photoionization cross sections and photoelectron angular distributions for x-ray line energies in the range 0.132–4.509 keV targets: 1 ≤ Z ≤ 100Published by Elsevier ,2004
- Carbon nitride films synthesized by combined ion-beam and laser-ablation processingPhysical Review B, 1995
- Growth of CN films by reactive ionized cluster beam depositionJournal of Crystal Growth, 1995
- Formation of the crystalline β-C3N4 phase by dual ion beam sputtering depositionMaterials Letters, 1995
- Carbon nitride films synthesized by NH3-ion-beam-assisted depositionJournal of Physics: Condensed Matter, 1994
- Novel Synthetic Routes to Carbon-Nitrogen Thin FilmsChemistry of Materials, 1994
- Measurement of the transmission function of the hemispherical energy analyser of ADES 400 electron spectrometerCzechoslovak Journal of Physics, 1994
- Structural Properties of Amorphous Carbon Nitride Films Prepared by Reactive RF-Magnetron SputteringJapanese Journal of Applied Physics, 1993
- Interactions of nitrogen (N2+) and nitrosyl (NO+) ions with surfaces of graphite, diamond, teflon, and graphite monofluorideJournal of the American Chemical Society, 1978
- Chemical reactions of N 2+ ion beams with group IV elements and their oxidesJournal of Electron Spectroscopy and Related Phenomena, 1978