Analytical approximation for perturbation of MOSFETsurface potential by polysilicon depletion layer
- 28 October 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (22) , 1974-1976
- https://doi.org/10.1049/el:19991325
Abstract
Compact MOSFET models require a computationally efficient description of the polysilicon depletion effect. An analytical solution is presented for the perturbation of the MOSFET surface potential by the polysilicon depletion region. Unlike earlier closed-form approximations, the new result is valid in all regions of the device operation and is compatible with surface-potential-based MOSFET modelsKeywords
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