Lateral Solid-Phase Epitaxy of Vacuum-Deposited Amorphous Si Film over Recessed SiO2 Patterns
- 1 May 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (5A) , L352
- https://doi.org/10.1143/jjap.24.l352
Abstract
A single-crystal silicon-on-insulator structure had been fabricated by lateral solid-phase epitaxy (L-SPE) of vacuum-deposited amorphous Si (a-Si) film on Si (100) substrate with SiO2 patterns. It is essential in L-SPE of vacuum-deposited a-Si that the substrate surface be planarized by recessing SiO2 patterns. A 7µm-wide single-crystal area over irecessed SiO2 was grown by low temperature annealing (575°C, 20 h). Only a polycrystalline area was formed over the unrecessed SiO2 pattern. This is probably because of voids or the large stress field in a-Si film at the pattern edge step.Keywords
This publication has 11 references indexed in Scilit:
- Amorphous-Si/crystalline-Si facet formation during Si solid-phase epitaxy near Si/SiO2 boundaryJournal of Applied Physics, 1984
- Lateral solid phase epitaxy of amorphous Si films on Si substrates with SiO2 patternsApplied Physics Letters, 1983
- Solid-phase lateral epitaxy of chemical-vapor-deposited amorphous silicon by furnace annealingJournal of Applied Physics, 1983
- Solid-Phase Epitaxy of CVD Amorphous Si Film on Crystalline SiJapanese Journal of Applied Physics, 1982
- Solid-Phase Lateral Epitaxial Growth onto Adjacent SiO2 Film from Amorphous Silicon Deposited on Single-Crystal Silicon SubstrateJapanese Journal of Applied Physics, 1982
- Some observations on the amorphous to crystalline transformation in siliconJournal of Applied Physics, 1982
- Growth Conditions of Deposited Si Films in Solid Phase EpitaxyJapanese Journal of Applied Physics, 1981
- Columnar microstructure in vapor-deposited thin filmsThin Solid Films, 1977
- Influence of 16O, 12C, 14N, and noble gases on the crystallization of amorphous Si layersJournal of Applied Physics, 1977
- Obliquely deposited amorphous Ge films. I. Growth and structureJournal of Applied Physics, 1975