Observations of arsenic atoms in silicon crystals by use of helium ion scattering
- 16 June 1971
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 5 (3) , 737-743
- https://doi.org/10.1002/pssa.2210050329
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Effects of crystal surface and imperfections on channeling phenomena of protonsPhysica Status Solidi (a), 1971
- The interpretation of channelled-ion beam measurements for foreign atom location in crystalsPhysics Letters A, 1970
- Implantation and Annealing Behavior of Group III and V Dopants in Silicon as Studied by the Channeling TechniqueJournal of Applied Physics, 1969
- ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERINGCanadian Journal of Physics, 1967
- Channeling Effects in the Energy Loss of 3-11-MeV Protons in Silicon and Germanium Single CrystalsPhysical Review B, 1967