Emission spectra of SiH(A 2Δ→X 2Π) and SiCl2(Ã 1B1→X̃ 1A1) in the VUV photolyses of silane and chlorinated silanes

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Abstract
Vacuum UV photolyses of silane and chlorinated silanes were investigated by using rare gas resonance lamps. Strong emissions, from the A 2Δ→X 2Π transition of SiH and the 1P0→1D2 transition of Si were observed in the photolysis of SiH4 by Ar and Kr resonance lamps. It was suggested that the threshold energies for the appearance of both emissions were lower than the values obtained by the electron impact of SiH4 reported by Perrin et al. A new broad unstructured emission band in the region 300–400 nm was observed in the photolysis of SiH2Cl2 and SiHCl3 by Ar, Kr, and Xe lamps. The band was attributed to the à 1B1→X̃ 1A1 transition of SiCl2 radicals from the measurement of the appearance energy of the emission by using synchrotron orbital radiation.

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