Simulation of EPROM programming characteristics
- 24 May 1990
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 26 (11) , 716-717
- https://doi.org/10.1049/el:19900467
Abstract
An efficient method for the simulation of EPROM programming, based on hydrodynamic calculations of electron energy within the device, is described. After the nonMaxwellian energy distribution is calculated, an expression for injected gate current is integrated to find the total gate charge, and hence the threshold voltage shift, as a function of time. Comparison of theoretical and experimental results for actual EPROM programming validates this method.Keywords
This publication has 0 references indexed in Scilit: