Microdosimetric Aspects of Proton-Induced Nuclear Reactions in Thin Layers of Silicon
- 1 January 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 29 (6) , 2012-2016
- https://doi.org/10.1109/tns.1982.4336488
Abstract
A computer simulation model which calculates the energy deposited within a small sensitive volume embedded in a larger volume as a result of nuclear interactions anywhere in the larger volume is outlined. The model is tested by comparison with the pulse-height spectra measured in silicon surface barrier detectors as a result of exposure to protons at different energies. The model is then used to provide physical insight into the role played by the nuclear recoil in localized energy deposition about a nuclear interaction.Keywords
This publication has 19 references indexed in Scilit:
- Proton-Induced Nuclear Reactions in SiliconIEEE Transactions on Nuclear Science, 1981
- Soft Errors Induced by Energetic ProtonsIEEE Transactions on Nuclear Science, 1979
- (p, pxn) and (p, xn) reactions and mechanisms onCs133at 550 MeVPhysical Review C, 1977
- Intranuclear-Cascade Calculation of the Secondary Nucleon Spectra from Nucleon-Nucleus Interactions in the Energy Range 340 to 2900 MeV and Comparisons with ExperimentPhysical Review B, 1969
- Proton Total Reaction Cross Sections at 16.4 MeVPhysical Review B, 1965
- Low-Energy Intranuclear Cascade CalculationPhysical Review B, 1963
- Recoil Properties ofBi209(p, pxn)Spallation ProductsPhysical Review B, 1963
- Recoil Study of the ReactionAl27(p, 3pn)Na24Physical Review B, 1963
- Momentum Imparted to Complex Nuclei in High-Energy InteractionsPhysical Review B, 1960
- Monte Carlo Calculations of Nuclear Evaporation Processes. III. Applications to Low-Energy ReactionsPhysical Review B, 1959