Modeling of LDMOS and LIGBT structures at high temperatures
- 17 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 10636854,p. 137-142
- https://doi.org/10.1109/ispsd.1994.583676
Abstract
Lateral IGBTs on SOI-substrates at high temperatures are investigated. Electrical-thermal network models for these devices have been developed taking into account the temperature dependence of the device parameters as well as the thermal network. The modeling results are verified by the experiments. The models have been simplified to a level which enables implementation in most circuit and system simulators for use in the electrothermal analysis.Keywords
This publication has 6 references indexed in Scilit:
- A versatile electrical model for IGBT including thermal effectsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Modelling of IGBTs and LIGBTs for Power Circuit SimulationPublished by Springer Nature ,1993
- Analysis of negative differential resistance in the I-V characteristics of shorted-anode LIGBT'sIEEE Transactions on Electron Devices, 1991
- Physical DMOST modeling for high-voltage IC CADIEEE Transactions on Electron Devices, 1990
- An analytical model for the steady-state and transient characteristics of the power insulated-gate bipolar transistorSolid-State Electronics, 1988
- Study of the quasi-saturation effect in VDMOS transistorsIEEE Transactions on Electron Devices, 1986