The electronic structure of the bound exciton and bound multiexciton complexes in Al‐doped Si
- 1 April 1979
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 92 (2) , 455-465
- https://doi.org/10.1002/pssb.2220920214
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
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- Details of the structure of bound excitons and bound multiexciton complexes in SiCanadian Journal of Physics, 1977
- Resolved fine structure of exciton complexes bound to phosphorus impurities in siliconSolid State Communications, 1977
- Fine structure in the bound exciton and multiple bound exciton luminescence from aluminium-doped siliconJournal of Physics C: Solid State Physics, 1977
- Quantitative Piezospectroscopy of the Ground and Excited States of Acceptors in SiliconPhysical Review B, 1973
- Group-Theoretical Study of Double Acceptors in Semiconductors under Uniaxial StressPhysical Review B, 1973