Electrochemical carrier concentration profiling in silicon
- 27 September 1979
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 15 (20) , 622-624
- https://doi.org/10.1049/el:19790444
Abstract
The application to silicon of an electrochemical technique, allowing automatic profiling over large depths and a wide range of carrier concentration, is described.Keywords
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