Large-area high-efficiency (AlGa)As—GaAs solar cells

1 April 1977

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 24 (4) , 473-475
https://doi.org/10.1109/T-ED.1977.18761

Abstract

An improved technique for making large-area high-efficiency (AlGa)As-GaAs solar cells is described. This includes a modified infinite melt liquid phase epitaxial process, for growing the desired (AlGa)As-GaAs and GaAs layers. Representative solar cells fabricated in this manner are described. Performance with an air mass zero efficiency in excess of 16 percent is shown, for cells of a 4-cm2area. Means are also shown for increasing this efficiency to about 18 percent.

Keywords

ENERGY CONVERSION
FABRICATION
TEMPERATURE
GALLIUM ARSENIDE
SURFACE RESISTANCE
EPITAXIAL GROWTH
PHOTONIC BAND GAP