Intermdiately Bound Excitons in Wurtzit Type Semiconducturs Doped with Transition Metal Impurities
- 1 November 1995
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 196-201, 755-760
- https://doi.org/10.4028/www.scientific.net/msf.196-201.755
Abstract
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