A comparison of Pd Schottky contacts on InP, GaAs and Si
- 28 February 1981
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 24 (2) , 99-103
- https://doi.org/10.1016/0038-1101(81)90001-0
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- A study of Pd2Si films on silicon using Auger electron spectroscopySolid-State Electronics, 1976
- InP Schottky-gate field-effect transistorsIEEE Transactions on Electron Devices, 1975
- Au - (n-type) InP Schottky barriers and their use in determining majority carrier concentrations in n-type InPJournal of Physics D: Applied Physics, 1973