Chemical beam epitaxy
- 1 September 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Circuits and Devices Magazine
- Vol. 4 (5) , 18-24
- https://doi.org/10.1109/101.8120
Abstract
Chemical beam epitaxy (CBE), an offshoot of molecular-beam epitaxy (MBE) and metalorganic chemical vapor deposition (MO-CVD), is described. It combines the beam nature of MBE and the control and use of all-vapor source as in MO-CVD. The growth kinetics of all three processes are examined, and their advantages and disadvantages are considered. The monolayer thickness control capabilities of CBE are highlighted. Device applications of CBE are discussed.<>Keywords
This publication has 2 references indexed in Scilit:
- Chemical beam epitaxy of Ga0.47In0.53As/InP quantum wells and heterostructure devicesJournal of Crystal Growth, 1987
- Gas source MBE of InP and GaxIn1−xPyAs1−y : Materials properties and heterostructure lasersJournal of Vacuum Science & Technology B, 1985