Si-doped aluminates for high temperature metal-gate CMOS: Zr-Al-Si-O, a novel gate dielectric for low power applications
- 11 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
We have investigated a new class of high K gate dielectric materials, Si-doped aluminates. These dielectrics, with TiN gates, can withstand high temperature CMOS processing and therefore do not require replacement gate technology. In this paper we focus on Si-doped zirconium aluminate (Zr-Al-Si-O), with K/spl sim/20. With the TiN gate stack subjected to the standard CMOS thermal budget, we have scaled this dielectric to t/sub eq//spl sim/1.2 nm with leakage current <50 mA/cm/sup 2/ and gate power budget 15) may be viable alternate gate dielectrics.Keywords
This publication has 2 references indexed in Scilit:
- Hafnium and zirconium silicates for advanced gate dielectricsJournal of Applied Physics, 2000
- The electronic structure at the atomic scale of ultrathin gate oxidesNature, 1999