Factors Affecting the Encroachment of Tungsten into the Si / SiO2 Interface during the Reduction of Tungsten Hexafluoride by Silicon
- 1 November 1990
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 137 (11) , 3683-3687
- https://doi.org/10.1149/1.2086287
Abstract
The effect of various plasma and wet chemical surface treatments on the encroachment of tungsten into the interface during the selective reduction of by silicon is discussed. A plasma maximizes tungsten encroachment, and a shorter immersion in dilute in minimizes encroachment. Two structures are used to evaluate the encroachment.Keywords
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