Light-induced creation of defects and related phenomena in silicon-based amorphous semiconductors

1 January 1984

proceedings article
Published by AIP Publishing in AIP Conference Proceedings

Vol. 120 (1) , 221-228
https://doi.org/10.1063/1.34744

Abstract

Light‐induced creation of defects and their annealing process were studied by ESR, photoconductivity and photoluminescence measurements for a‐Si_1−xN_x:H and a‐Si_1−xC_x:H films besides a‐Si:H films with various spin densities and H contents. The results show that the degradation of the photoconductivity and the photoluminescence is mainly attributed to creation of dangling bonds due to bond breaking.

Keywords

SILANES
FILMS
AMORPHOUS STATE
RADIATION EFFECTS
DANGLING BONDS
ANNEALING
ELECTRON SPIN RESONANCE
PHOTOCONDUCTIVITY
PHOTOLUMINESCENCE
SPIN DENSITY
VISIBLE RADIATION
MEDIUM TEMPERATURE
GLOW DISCHARGES
SPUTTERING
LOW TEMPERATURE

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