8-watt GaN HEMTs at millimeter-wave frequencies
- 6 April 2006
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 583-585
- https://doi.org/10.1109/iedm.2005.1609414
Abstract
Field-plated short-gate-length GaN HEMTs were developed for superior large-signal performance at millimeter-wave frequencies. 100-mum-wide devices achieved 8.6 W/mm power density at 40 GHz. Scaled-up, pre-matched 1.05-mm-wide devices generated 5.4 & 5.2 W output power with associated PAE of 36 & 31 % at 30 and 35 GHz, respectively. A 1.5-mm-wide device produced 8 W at 30 GHz with 31 % PAE, representing the state-of-the-art for GaN HEMTs at millimeter-wave frequenciesKeywords
This publication has 1 reference indexed in Scilit:
- 30-W/mm GaN HEMTs by Field Plate OptimizationIEEE Electron Device Letters, 2004