Review of Rapid Thermal Annealing of Ion Implanted GaAs
- 1 December 1986
- journal article
- review article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 133 (12) , 2590-2596
- https://doi.org/10.1149/1.2108477
Abstract
Results of rapid thermal annealing (RTA) of ion implanted for times of 1–100s are reviewed. Comparison between silicon, selenium, and other donor ions is presented and the highest doping levels achieved are highlighted. P‐type dopants such as zinc, magnesium, and beryllium are also discussed, as well as the use of dual implants to enhance activation. N‐type doping levels up to have been demonstrated, whereas for p‐type doping levels approaching 1020cm−3 with little diffusion have been achieved. The less stringent requirements imposed on both the encapsulant and substrate material when RTA is used are also discussed.Keywords
This publication has 0 references indexed in Scilit: