RF noise in 1.5 nm gate oxide MOSFETs and the evaluation of the NMOS LNA circuit integrated on a chip
- 27 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
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- 0.25 /spl mu/m salicide CMOS Technology Thermally Stable Up To 1,000/spl deg/C With High TDDB ReliabilityPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1997