Planar heterojunction bipolar transistor with an implanted base
- 16 February 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (4) , 282-283
- https://doi.org/10.1049/el:19890196
Abstract
A novel process to fabricate a planar emitter-up AlGaAs/GaAs heterojunction bipolar transistor HBT, has been developed relying on selective base implantation through the emitter and the heterojunction. The selective base definition means that all three transistor contacts can be made from the top surface, thereby making device integration easier because of the planar surface topology. This simple transistor fabrication process was examined using MOCVD material. Transistors with a DC current gain of 120 have been measured.Keywords
This publication has 1 reference indexed in Scilit:
- High-Speed MSI Current-Mode Logic Circuits Implemented with Heterojunction Bipolar TransistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986