Properties and performance of TFEL structures
- 31 August 1985
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 72 (1-2) , 538-544
- https://doi.org/10.1016/0022-0248(85)90202-7
Abstract
No abstract availableKeywords
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- How the ZnS:Mn layer thickness contributes to the performance of AC thin-film EL devices grown by atomic layer epitaxy (ALE)IEEE Transactions on Electron Devices, 1983
- The dependences of electroluminescent characteristics of ZnS:Mn thin films upon their device parametersJournal of Applied Physics, 1981
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