Measurements of impedance of DH semiconductor lasers
- 1 January 1977
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 65 (9) , 1412-1413
- https://doi.org/10.1109/proc.1977.10731
Abstract
Impedance of GaAs-AlGaAs DH lasers were measured to frequency and the bias current. Real parts of the impedance were about 0.7-1.8 Ω and they were almost flat in the frequency range of 0.4-1.9 GHz. Imaginary parts were found to be capacitive and its absolute value increases with frequency.Keywords
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