The Effect of Sintering Temperature on the Barrier Height of p-type PtSi Schottky Diodes
Open Access
- 1 January 1991
- journal article
- research article
- Published by CSIRO Publishing in Australian Journal of Physics
- Vol. 44 (1) , 67-72
- https://doi.org/10.1071/ph910067
Abstract
The effect of sintering temperature on the barrier height of p-type PtSi Schottky diodes is studied by electrical and infrared photoresponse methods. It is revealed that there is a consistent difference of about 0�06 eV for two samples sintered at different temperatures.Keywords
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