Current transport properties of metal/hydrogenated amorphous silicon/GaSb structures

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Abstract
Hydrogenated amorphous silicon (a-Si:H) has been deposited on n- and p-GaSb by the plasma glow discharge technique. The electrical characteristics of metal/a-Si:H/GaSb structures are presented. The current transport in these structures is dictated by the barriers at the metal/a-Si:H and a-Si:H/GaSb interfaces and the series resistance of the bulk a-Si:H interfacial layer. Space charge limited current in the interfacial layer gives rise to a voltage dependent resistance and increases the forward ‘‘turn-on’’ voltage. Furthermore, these structures exhibit extremely low reverse leakage currents and high reverse breakdown voltages. Significantly, rectifying junctions of a-Si:H/p-GaSb have been achieved with barrier heights of ∼0.4 eV.

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