High pressure photoluminescence and resonant Raman study of GaAs
- 1 January 1978
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 25 (4) , 209-211
- https://doi.org/10.1016/0038-1098(78)90214-4
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- GaAs lower conduction-band minima: Ordering and propertiesPhysical Review B, 1976
- Multiphonon resonant Raman scattering in GaSeSolid State Communications, 1976
- Dependence of the direct energy gap of GaAs on hydrostatic pressurePhysical Review B, 1975
- Raman scattering and phonon dispersion in Si and GaP at very high pressurePhysical Review B, 1975
- The Standard Thermodynamic Functions for the Formation of Electrons and Holes in Ge, Si, GaAs , and GaPJournal of the Electrochemical Society, 1975
- Crystal Dynamics of Gallium ArsenidePhysical Review B, 1963