1.3 µm light-emission-and-detection (LEAD)diodeswith semi-insulating buried heterostructure
- 1 September 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (18) , 1518-1519
- https://doi.org/10.1049/el:19941003
Abstract
The authors present 1.3 µm light-emission-and-detection (LEAD) diodes fabricated by semi-insulating MOVPE growth and C2H6 dry-etching processes. As a laser, this LEAD diode operates with low threshold and high power. Aging test results confirm its long-term stability of up to 4500 h. As a detector, a high sensitivity of 0.42 A/W and a polarisation insensitivity of less than 0.3 dB were achieved by using facet coating and a bulk active layer. The capacitance was effectively reduced to 0.6 pF by introducing a semi-insulating current-blocking structure.Keywords
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