SiO2 Film Stress—Thickness Dependence, Non‐Planar Oxidation, and Fluorine‐Related Effects
- 1 August 1992
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 139 (8) , 2322-2326
- https://doi.org/10.1149/1.2221224
Abstract
The thickness dependence of oxide stress for dry and fluorinated oxide films grown by enhanced thermal oxidation was investigated. A small variation of stress with thickness was observed. Non‐planar structures were oxidized and rounder corner structures were found to result in the case of fluorinated oxidation. Furthermore, pronounced oxide stress differences were observed for samples grown using two distinct fluorinated oxidation procedures and were ascribed to different fluorine profiles in the oxides.Keywords
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