Investigation of TE and TM polarised laser emission in GaInP/AlGaInP lasers by growth-controlled strain

30 August 1990

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 26 (18) , 1438-1439
https://doi.org/10.1049/el:19900922

Abstract

GaInP/AlGaInP double heterostructure lasers can be obtained with either TE or TM polarised emission. In addition it is shown that, by using appropriate samples, TE or TM lasing can be selected by changing the temperature or the cavity length.

Keywords

POLARISED LASER EMISSION
CAVITY LENGTH
GROWTH-CONTROLLED STRAIN
TE POLARISED EMISSION
GAINP-ALGAINP
TEMPERATURE
SEMICONDUCTOR LASER
TM POLARISED EMISSION
DOUBLE HETEROSTRUCTURE LASERS

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