Ballistic transport and electroluminescence in IIB–VI and IIA–VI compounds
- 1 April 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 101 (1-4) , 967-975
- https://doi.org/10.1016/0022-0248(90)91115-7
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- Efficient ZnS-like alkaline earth sulfide electroluminescenceJournal of Crystal Growth, 1990
- Theory of high-field electronic transport in bulk ZnS and ZnSeJournal of Applied Physics, 1988
- Physics of electroluminescence devicesJournal of Luminescence, 1988
- New developments in IIa–VIb (alkaline-earth chalcogenide) binary semiconductorsJournal of Crystal Growth, 1988
- Electron Breakdown in Polar Insulating and Semiconducting LayersPhysica Status Solidi (a), 1986
- Physical processes in high-field electroluminescenceJournal of Luminescence, 1984
- Physical Concepts of High-Field, Thin-Film Electroluminescence DevicesPhysica Status Solidi (a), 1982
- Hot electron phenomena and electroluminescenceJournal of Luminescence, 1981
- Direct impact excitation of luminescent centres in ZnSe single crystalsPhysica Status Solidi (a), 1978
- Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductorsPhysical Review B, 1976