25 GHz dielectric resonator oscillator using an AlGaAs/GaAs HBT
- 30 August 1990
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 26 (18) , 1514-1516
- https://doi.org/10.1049/el:19900972
Abstract
The design and performance of a dielectric resonator oscillator (DRO) using a heterojunction bipolar transistor (HBT) operating in the K-band frequency are described. The oscillator was fabricated in microstrip integrated circuit (MIC) on an aluminium substrate. The device used was an AlGaAs/GaAs HBT with an n+-GaInAs cap layer fabricated through a one-mask multiple self-alignment process. The oscillator showed an output power of 11.8 dBm with a DC-to-RF efficiency of 15.8%, and the phase noise of −78 dBc/Hz at 10 kHz off carrier which was 8 dB better than that of a GaAs FET oscillator implemented on an identical circuit.Keywords
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