Dielectric Relaxations in Reduced Rutile () at Low Temperatures
- 15 November 1967
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 163 (3) , 756-768
- https://doi.org/10.1103/physrev.163.756
Abstract
The complex dielectric constant of reduced rutile, , has been measured at frequencies between and Hz at temperatures between 1.2 and 50°K. Three distinct relaxation processes have been observed: process I at temperatures around 4.0°K with activation energy eV and pre-exponential factor sec, process II at temperatures around 15°K with eV and sec, and process III at temperatures around 11°K with eV and sec. All three relaxation processes are ascribed to polaron hopping between normal cation lattice sites around complex ionic defect cores. By increasing the concentration of trivalent impurity, the most likely ionic core responsible for process I is found to be an oxygen vacancy associated with one trivalent substitutional impurity, while the core most likely responsible for process II is an interstitial ion in association with two trivalent substitutional impurity ions. An ion core consisting of a single pentavalent substitutional impurity accounts well for process III.
Keywords
This publication has 25 references indexed in Scilit:
- Multiple-Band Conduction in-Type Rutile (Ti)Physical Review B, 1965
- Activation Energies of Low Temperature Conductivity of Reduced RutileJournal of the Physics Society Japan, 1964
- Oxygen Vacancies and Electrical Conduction in Metal OxidesPhysical Review B, 1964
- Experimental evidence from conductivity measurements for interstitial titanium in reduced TiO2Solid State Communications, 1963
- Photoprotons from S32Journal of the Physics Society Japan, 1963
- Thermogravimetric studies of the defect structure of rutile (TiO2)Journal of Physics and Chemistry of Solids, 1962
- Electrical Resistivity and Defect Energy Levels in Reduced Titanium Dioxide at Low TemperaturesJournal of the Physics Society Japan, 1961
- Recent Studies on Rutile (TiO2)Journal of Applied Physics, 1961
- On the Defect Structure of Rutile.Acta Chemica Scandinavica, 1959
- Electrical Properties of Titanium Dioxide SemiconductorsPhysical Review B, 1953