EFFICIENT ELECTROLUMINESCENCE FROM GaAs DIODES AT 300°K
- 15 September 1966
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 9 (6) , 221-223
- https://doi.org/10.1063/1.1754721
Abstract
The light-emitting diodes described in this Letter differ from standard type diodes insofar as the amphoteric dopant Si is the dominant impurity on both sides of the junction. The p-n junction is completely solution regrown. The highly compensated p region gives rise to a wide active region up to 50 μ in width. The interesting feature of these diodes is their high external quantum efficiencies at 300°K. Values up to 6% have been measured on diodes, when an antireflecting coat has been applied.Keywords
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