Minority Carrier Lifetime Measurement in HF Solution to Evaluate Si Substrates for Solar Cells
- 1 January 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (1A) , L166
- https://doi.org/10.1143/jjap.29.l166
Abstract
Minority carrier lifetime measurement using a microwave photoconductivity decay method was examined. A simple method of immersing a silicon wafer in a toxic HF solution by using a plastic envelope is introduced. An effective lifetime in 50% HF solution is much higher than that in air due to reduction of the surface recombination velocity and is almost the same compared with that of an oxidized and well-passivated substrate. This method provides the effective lifetime, which approximates a bulk lifetime, without an oxide layer and is useful in estimating the short circuit current of solar cells prior to the cell fabrication.Keywords
This publication has 2 references indexed in Scilit:
- A Chemical/Microwave Technique for the Measurement of Bulk Minority Carrier Lifetime in Silicon WafersJournal of the Electrochemical Society, 1988
- Auger recombination in silicon at l o w carrier densitiesApplied Physics Letters, 1986