Variation of semiconductor properties through the SiOx region of Si SiO2 interfaces
- 1 January 1980
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 35-36, 1011-1014
- https://doi.org/10.1016/0022-3093(80)90333-6
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Energy‐gap variation at the Si‐SiOx–SiO2 interfacePhysica Status Solidi (b), 1979
- Statistical investigations of the structure of SiOxPhysica Status Solidi (a), 1979
- Chemical bond and related properties of SiO2 VI. electronic structure of SiOxPhysica Status Solidi (a), 1979
- Chemical shift of Si 2p core level in SiOx calculation of relaxation contributionPhysica Status Solidi (b), 1979
- Chemical bond and related properties of SiO2 III. Core-level shifts in SiOxPhysica Status Solidi (a), 1977