1.5 μm GaInAsP/InP distributed reflector (DR) laser with high-low reflection grating structure

23 November 1989

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 25 (24) , 1650-1651
https://doi.org/10.1049/el:19891106

Abstract

A 1.5 μm-wavelength dynamic-single-mode laser with highlow reflection grating structure aiming at high output and one-directional output operation has been obtained for the first time using a selective etching process and low-pressure MOVPE regrowth. A front/rear output power ratio exceeding 50 and side-mode suppression ratio (SMSR) greater than 39dB were obtained at 1.3 times the threshold.

Keywords

HIGH-LOW REFLECTION GRATING STRUCTURE
SELECTIVE ETCHING PROCESS
UNI-DIRECTIONAL OUTPUT OPERATION
GAINASP-INP
SEMICONDUCTOR LASERS
INTEGRATED OPTICS
BRAFF REFLECTOR TYPE
DYNAMIC-SINGLE-MODE LASER
DISTRIBUTED FEEDBACK TYPE
LOW-PRESSURE MOVPE REGROWTH
OPTICAL WAVEGUIDES
DISTRIBUTED REFLECTOR
1.5 MICRON

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