High frequency characterization of small geometry bipolar transistors
- 6 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Figure of merit for integrated bipolar transistorsSolid-State Electronics, 1986
- Simulation of excess phase in bipolar transistorsIEEE Transactions on Circuits and Systems, 1978
- High-Frequency Power Gain of Junction TransistorsProceedings of the IRE, 1955