Frequency stabilisation of semiconductor laser using atomic absorption line under direct FSK

7 January 1988

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 24 (1) , 13-14
https://doi.org/10.1049/el:19880009

Abstract

The oscillation frequency of an AlGaAs laser diode is stabilised using the Rb-D2 absorption line (780 nm) under the direct frequency shift keying (FSK) condition. Only one side (mark or space) frequency signal is used to obtain the feedback signal for stabilisation in this system. The stability obtained is almost the same as that of the case without FSK.

Keywords

ATOMIC ABSORPTION LINE
780 NM
FREQUENCY SIGNAL
DIRECT FSK
SEMICONDUCTOR LASER
OSCILLATION FREQUENCY
ALGAAS
FEEDBACK SIGNAL

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